Title :
Wedge-shaped field emitter arrays for flat display
Author :
Kaneko, A. ; Kanno, T. ; Tomii, K. ; Kitagawa, M. ; Hirao, T.
Author_Institution :
Matsushita Res. Inst. Tokyo Inc., Kawasaki, Japan
fDate :
10/1/1991 12:00:00 AM
Abstract :
The authors have investigated a field emitter for flat displays which can be precisely fabricated in a large area with simple processes. The authors discuss the simulation and the experimental results of the new type of field emitter. A wedge-shaped field emitter is constructed of an emitter and a gate on an insulating substrate. The emitter and the gate have a wedge shape in plane and are placed meeting each other with a narrow gap between them. The emitter is formed by a 500-nm-thick Mo film deposited on an Al stripe electrode layer and the gate electrode is a 200-nm-thick Cr film on a SiO2 layer with a thickness nearly the same as that of the Mo film. The electron emission began at about 50 V which is markedly lower than in other types of field emitters and the emission current obtained was 12 μA at 85 V
Keywords :
cathodes; electron field emission; flat panel displays; vacuum microelectronics; 12 muA; 200 nm; 50 to 85 V; 500 nm; Al stripe electrode layer; Cr film; Mo film; SiO2 layer; electron emission; electron-emission voltage; emission current; experimental results; field emitter arrays; flat display; insulating substrate; large area; narrow gap; precisely fabricated; simple processes; wedge-shaped field emitter; Cathodes; Chromium; Displays; Electrodes; Fabrication; Field emitter arrays; Meeting planning; Resists; Shape; Vacuum technology;
Journal_Title :
Electron Devices, IEEE Transactions on