DocumentCode :
1408525
Title :
GaAs field emitter arrays
Author :
Bakhtizin, R.Z. ; Ghots, S.S. ; Ratnikova, E.K.
Author_Institution :
Dept. of Phys. Electron., Bashkir State Univ., Ufa, USSR
Volume :
38
Issue :
10
fYear :
1991
fDate :
10/1/1991 12:00:00 AM
Firstpage :
2398
Lastpage :
2400
Abstract :
The authors report on technological peculiarities of fabrication of large-area gallium arsenide multipoint cathodes. The topics discussed are fabrication methods, noise characteristics and uniformity of emission, and lifetime and degradation of semiconductor multipoint cathodes. The results of the emission characteristics investigation are described. Expressions for the noise power spectral density function and the time constant of degradation for such cathode arrays are obtained
Keywords :
III-V semiconductors; cathodes; electron field emission; gallium arsenide; semiconductor technology; vacuum microelectronics; GaAs field emitter arrays; cathode arrays; degradation; emission characteristics; fabrication; fabrication methods; large area multipoint cathodes; lifetime; noise characteristics; noise power spectral density function; semiconductor multipoint cathodes; technological peculiarities; time constant of degradation; uniformity of emission; Cathodes; Dark current; Electron mobility; Etching; Fabrication; Field emitter arrays; Gallium arsenide; Mass spectroscopy; Surface discharges; Surface treatment;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.88534
Filename :
88534
Link To Document :
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