GaAs field emitter arrays

Author

Bakhtizin, R.Z. ; Ghots, S.S. ; Ratnikova, E.K.

Author_Institution

Dept. of Phys. Electron., Bashkir State Univ., Ufa, USSR

Volume

38

Issue

10

fYear

1991

fDate

10/1/1991 12:00:00 AM

Firstpage

2398

Lastpage

2400

Abstract

The authors report on technological peculiarities of fabrication of large-area gallium arsenide multipoint cathodes. The topics discussed are fabrication methods, noise characteristics and uniformity of emission, and lifetime and degradation of semiconductor multipoint cathodes. The results of the emission characteristics investigation are described. Expressions for the noise power spectral density function and the time constant of degradation for such cathode arrays are obtained

Keywords

III-V semiconductors; cathodes; electron field emission; gallium arsenide; semiconductor technology; vacuum microelectronics; GaAs field emitter arrays; cathode arrays; degradation; emission characteristics; fabrication; fabrication methods; large area multipoint cathodes; lifetime; noise characteristics; noise power spectral density function; semiconductor multipoint cathodes; technological peculiarities; time constant of degradation; uniformity of emission; Cathodes; Dark current; Electron mobility; Etching; Fabrication; Field emitter arrays; Gallium arsenide; Mass spectroscopy; Surface discharges; Surface treatment;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.88534

Filename

88534