Title :
GaAs field emitter arrays
Author :
Bakhtizin, R.Z. ; Ghots, S.S. ; Ratnikova, E.K.
Author_Institution :
Dept. of Phys. Electron., Bashkir State Univ., Ufa, USSR
fDate :
10/1/1991 12:00:00 AM
Abstract :
The authors report on technological peculiarities of fabrication of large-area gallium arsenide multipoint cathodes. The topics discussed are fabrication methods, noise characteristics and uniformity of emission, and lifetime and degradation of semiconductor multipoint cathodes. The results of the emission characteristics investigation are described. Expressions for the noise power spectral density function and the time constant of degradation for such cathode arrays are obtained
Keywords :
III-V semiconductors; cathodes; electron field emission; gallium arsenide; semiconductor technology; vacuum microelectronics; GaAs field emitter arrays; cathode arrays; degradation; emission characteristics; fabrication; fabrication methods; large area multipoint cathodes; lifetime; noise characteristics; noise power spectral density function; semiconductor multipoint cathodes; technological peculiarities; time constant of degradation; uniformity of emission; Cathodes; Dark current; Electron mobility; Etching; Fabrication; Field emitter arrays; Gallium arsenide; Mass spectroscopy; Surface discharges; Surface treatment;
Journal_Title :
Electron Devices, IEEE Transactions on
