Title :
Raman Spectroscopy: Alternate Method for Strain and Carbon Substitution Study in
Author :
Yeoh, W.K. ; Zheng, R.K. ; Ringer, S.P. ; Li, W.X. ; Xu, X. ; Chen, S.K. ; MacManus-Driscoll, J.L.
Author_Institution :
Australian Centre for Microscopy & Microanalysis, Univ. of Sydney, Sydney, NSW, Australia
fDate :
6/1/2011 12:00:00 AM
Abstract :
In the present work, Raman spectroscopy is employed to study the strain and carbon substitution effect of SiC doped polycrystalline MgB2. We demonstrated that Raman spectroscopy analysis is more accurate to estimate the carbon substitution compared to the X-ray diffraction analysis. Raman result showed that lattice shrinkage cannot account alone for carbon incorporation where high level of lattice distortion is attributing to both C substitution and lattice strain effect. Our result provides alternative explanation for lattice variation in the non-carbon doped MgB2 which is basically due to lattice strain.
Keywords :
Raman spectra; doping; magnesium compounds; silicon compounds; type II superconductors; MgB2:SiC; Raman spectroscopy; carbon substitution effect; doped polycrystalline superconductor; lattice distortion; lattice shrinkage; lattice strain effect; Carbon; Crystals; Doping; Lattices; Raman scattering; Silicon carbide; Strain; ${rm MgB}_{2}$ superconductor; Carbon substitution; Raman spectroscopy; non-uniform strain effect;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
DOI :
10.1109/TASC.2010.2091939