• DocumentCode
    1408692
  • Title

    Solution-Processed Quantum Dot Photodetectors

  • Author

    Konstantatos, Gerasimos ; Sargent, Edward H.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Toronto, Toronto, ON, Canada
  • Volume
    97
  • Issue
    10
  • fYear
    2009
  • Firstpage
    1666
  • Lastpage
    1683
  • Abstract
    Digital imaging has traditionally been enabled by single-crystalline photodetectors. This approach typically either mandates the use of silicon as photon-to-electron converter or requires a hybrid-integrated solution. In contrast, solution-processed optoelectronic materials offer convenient integration of light-sensing materials atop an electronic readout circuit. Colloidal quantum dots offer particular advantages, combining solution-processing with the spectral tunability afforded by the quantum size effect. Here we review recent progress in solution-processed quantum dot photodetectors and their application in future imaging systems. We focus on progress towards high responsivity (photon-to-electron gains exceeding 1000) and sensitivity (normalized detectivity D* ~ 1013Jones) in the visible, the near infrared, and the short-wavelength infrared. We also highlight the achievement of solution-processed photoconductive photodetectors combining photoconductive gain and temporal responses faster than 30 ms, devices therefore compatible with video-frame-rate imaging. We conclude with a discussion of recent colloidal quantum dot photodiodes having megahertz bandwidth and detectivity of 1011 Jones.
  • Keywords
    colloids; elemental semiconductors; image sensors; infrared detectors; infrared imaging; integrated optics; integrated optoelectronics; photodetectors; photodiodes; semiconductor quantum dots; silicon; Si; colloidal quantum dot photodiodes; digital imaging; electronic readout circuit; hybrid-integrated solution; light-sensing materials; near infrared wavelength sensitivity; photoconductive gain; photoconductive photodetectors; photon-to-electron converter; photon-to-electron gains; quantum size effect; short-wavelength infrared sensitivity; silicon; single-crystalline photodetectors; solution-processed optoelectronic materials; solution-processed quantum dot photodetectors; spectral tunability; temporal response; video-frame-rate imaging; visible wavelength sensitivity; Bandwidth; Circuits; Digital images; Infrared detectors; Optical imaging; Photoconducting devices; Photodetectors; Photodiodes; Quantum dots; Silicon; Nanocrystals; photodetectors; quantum dots; solution-processed;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/JPROC.2009.2025612
  • Filename
    5247124