Title :
Proton-Implantation-Isolated Separate Absorption Charge and Multiplication 4H-SiC Avalanche Photodiodes
Author :
Zhou, Qiugui ; Mcintosh, Dion ; Liu, Han-Din ; Campbell, Joe C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA
fDate :
3/1/2011 12:00:00 AM
Abstract :
We report reach-through structure 4H-SiC avalanche photodiodes isolated by proton implantation. These devices achieved low dark current (85 pA at a gain of 1000) and high external quantum efficiency ( 75% at 260 nm).
Keywords :
avalanche photodiodes; dark conductivity; ion implantation; silicon compounds; SiC; avalanche photodiodes; dark current; proton implantation isolated separate absorption charge; quantum efficiency; Avalanche photodiode (APD); photodetector;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2010.2101057
