Title :
A Reliability Study on Green InGaN–GaN Light-Emitting Diodes
Author :
Li, Z.L. ; Lai, P.T. ; Choi, H.W.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China
Abstract :
In this letter, the reliability of green InGaN-GaN light-emitting diodes (LEDs) has been analyzed by correlating the defect density of wafers with various device parameters, including leakage current, 1/f noise, and degradation rate. It was found that as the wavelength of green LEDs increases from 520 to 550 nm by increasing the indium content in the quantum wells, the defect density also increases, thus leading to larger leakage current, enhanced noise magnitude, and shortened device lifetime.
Keywords :
1/f noise; III-V semiconductors; gallium compounds; indium compounds; leakage currents; light emitting diodes; semiconductor quantum wells; wide band gap semiconductors; 1/f noise; InGaN-GaN; green light-emitting diodes; leakage current; quantum wells; reliability study; wavelength 520 nm; wavelength 550 nm; Annealing; Atomic force microscopy; Capacitive sensors; Degradation; Gallium nitride; Helium; Indium; Leakage current; Light emitting diodes; Lithography; Light-emitting diode (LED); reliability;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2009.2028155
