DocumentCode :
1409384
Title :
Design techniques for a low-power low-cost CMOS A/D converter
Author :
Chang, Dong-Young ; Lee, Seung-Hoon
Author_Institution :
Dept. of Electron. Eng., Sogang Univ., Seoul, South Korea
Volume :
33
Issue :
8
fYear :
1998
fDate :
8/1/1998 12:00:00 AM
Firstpage :
1244
Lastpage :
1248
Abstract :
A 10 bit 200 kHz algorithmic analog-to-digital converter (ADC) was designed to demonstrate design techniques for low-power low-cost CMOS integrated systems. A switched-bias power-reduction technique reduces the total system power by 10%. A layout technique employing extra thin poly-layer lines instead of conventional dummy devices reduces plasma-induced comparator offsets. Based on a standard digital CMOS process with a single poly layer, the ADC adopts metal-to-metal capacitors for internal charge storage. The experimental ADC was fabricated in a 0.6 μm single-poly double-metal n-well CMOS technology, and showed a power consumption of 7 mW and a signal-to-noise-and-distortion ratio (SNDR) of 53 dB at the Nyquist sampling rate with a 3.3 V single supply voltage. The measured differential and integral nonlinearities of the prototype are less than ±0.8 and ±1.8 LSB, respectively
Keywords :
CMOS integrated circuits; analogue-digital conversion; circuit tuning; compensation; integrated circuit design; integrated circuit layout; 0.6 micron; 10 bit; 200 kHz; 3.3 V; 7 W; algorithmic ADC; analog-to-digital converter; design techniques; extra thin poly-layer lines; internal charge storage; layout technique; low-cost A/D converter; low-power CMOS ADC; metal-to-metal capacitors; n-well CMOS technology; onchip tuning circuit; plasma-induced comparator offsets reduction; single supply voltage; single-poly double-metal technology; standard digital CMOS process; switched-bias power-reduction technique; Algorithm design and analysis; Analog-digital conversion; CMOS process; CMOS technology; Capacitors; Energy consumption; Plasma devices; Prototypes; Signal sampling; Voltage measurement;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.705363
Filename :
705363
Link To Document :
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