Title :
Design of a built-in current sensor for IDDQ testing
Author :
Kim, Jeong Beom ; Hong, Sung Je ; Kim, Jong
Author_Institution :
Sch. of Electr. & Electron. Eng., Chungbuk Nat. Univ., South Korea
fDate :
8/1/1998 12:00:00 AM
Abstract :
IDDQ testing can cover the traditional stuck-at-faults as well as other defects that may affect reliability. One of the most critical issues in IDDQ testing is a built-in current sensor (BICS) that can be used to detect abnormal static currents. The most serious problem in the conventional current sensor is performance degradation. The purpose of this work is to present an effective BICS, which has a very small impact on the performance of the circuit under test (CUT). The proposed BICS works in two-modes, the normal mode and the test mode. In the normal mode, our BICS is totally isolated from the CUT. Thus there Is absolutely no performance degradation of the CUT. In the testing mode, our BICS detects the abnormal current caused by permanent manufacturing defects. Furthermore, the BICS requires neither an external voltage reference nor a current source. Hence, the BICS requires less area and is more efficient than the conventional current sensors. The validity and effectiveness of the proposed RIGS are verified through the HSPICE simulation and the chip test. The fabrication was done through “CMPSC8” 0.8 μm n-well process. The testing results show that our BICS operates at a speed of 25 MHz
Keywords :
CMOS integrated circuits; built-in self test; electric current measurement; electric sensing devices; integrated circuit reliability; integrated circuit testing; 0.8 micron; 25 MHz; BICS; IDDQ testing; abnormal static currents detection; built-in current sensor; n-well CMOS process; permanent manufacturing defects; stuck-at-faults; CMOS integrated circuits; CMOS logic circuits; CMOS technology; Circuit testing; Current supplies; Degradation; Fabrication; Logic testing; Power supplies; Very large scale integration;
Journal_Title :
Solid-State Circuits, IEEE Journal of