Short channel epi-MOSFET model

Author

Suzuki, Kunihiro

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

Volume

47

Issue

12

fYear

2000

fDate

12/1/2000 12:00:00 AM

Firstpage

2372

Lastpage

2378

Abstract

We show how threshold voltages and the electric field perpendicular to a channel are controlled by varying the thickness of the epi-layer in long epitaxial channel MOSFET devices (epi-MOSFETs). Using our proposal of a two-region polynomial potential distribution and a universal boundary condition that effectively expresses the variation of depletion width along a channel, we calculated the two-dimensional (2-D) potential distribution. We also derived a threshold voltage model for short channel epi-MOSFETs. Our model reproduces the numerical data of sub-0.1-μm gate length devices, and predicts that the short channel immunity of these devices is not as good as predicted by the previous model. However, their performance is superior to that of double-gate SOI MOSFETs.

Keywords

MOSFET; semiconductor device models; depletion width; layer thickness; model; perpendicular electric field; short channel epi-MOSFET; short channel immunity; threshold voltage; two-region polynomial potential distribution; universal boundary condition; Boundary conditions; MOSFET circuits; Polynomials; Predictive models; Proposals; Semiconductor process modeling; Thickness control; Threshold voltage; Two dimensional displays; Voltage control;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.887024

Filename

887024