Title :
High output-power and narrow spectral-linewidth operation of a 1.3-μm gain-coupled DFB laser with InAsP buried absorptive grating
Author :
Inaba, Y. ; Kito, M. ; Ohya, J. ; Ishino, R. ; Matsui, Y.
Author_Institution :
Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
Abstract :
High output-power and narrow spectral-linewidth operation of 1.3-μm gain-coupled distributed feedback lasers with grating are reported. The fabricated output power of 230 mW and a linewidth of 100 kHz by reducing optical confinement in multiple quantum wells to improve the single-mode stability at high output-power operation.
Keywords :
III-V semiconductors; diffraction gratings; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser modes; laser stability; laser transitions; quantum well lasers; spectral line breadth; 1.3 mum; 1.3-/spl mu/m gain-coupled DFB laser; 230 mW; InAsP; InAsP buried absorptive grating; InGaAsP; InGaAsP MQW lasers; distributed feedback lasers; high output-power; multiple quantum wells; narrow spectral-linewidth operation; optical confinement; optical transmitters; output power; single-mode stability; Distributed feedback devices; Gratings; Laser feedback; Laser stability; Power generation; Power lasers; Quantum well lasers; Refractive index; Semiconductor lasers; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
