Title :
High performance and high reliability of 1.55-μm current-blocking grating complex-coupled DFB lasers
Author :
Hung-Pin Shiao ; Chi-Yu Wang ; Tien-Tsorng Shih ; Yuan-Kuang Tu
Author_Institution :
Applied Res. Lab., Chunghwa Telecom. Co. Ltd., Taoyuan, Taiwan
Abstract :
We report the high performance and high reliability of the 1.55 μm current-blocking grating complex-coupled InGaAsP strained distributed-feedback MQW lasers. Small variation in slope efficiency, high characteristic temperature, and high side mode suppression ratio have been achieved over a wide temperature range of 20/spl deg/C-90/spl deg/C. From the accelerated aging test, the median life at 25/spl deg/C and 5 mW is estimated to be longer than 50 years.
Keywords :
Debye temperature; III-V semiconductors; ageing; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser modes; laser reliability; laser transitions; optical testing; quantum well lasers; semiconductor device reliability; semiconductor device testing; 1.55 mum; 1.55-/spl mu/m current-blocking grating complex-coupled DFB lasers; 20 to 90 C; 25 C; 5 mW; 50 y; InGaAsP; InGaAsP strained distributed-feedback MQW lasers; accelerated aging test; high characteristic temperature; high performance; high reliability; high side mode suppression ratio; median life; slope efficiency; wide temperature range; Distributed feedback devices; Erbium-doped fiber lasers; Gratings; Indium phosphide; Laser feedback; Laser modes; Quantum well lasers; Semiconductor lasers; Temperature distribution; Wet etching;
Journal_Title :
Photonics Technology Letters, IEEE
