DocumentCode :
14107
Title :
Effects of Dislocation Walls on Image Quality When Using Cadmium Telluride X-Ray Detectors
Author :
Buis, C. ; Marrakchi, G. ; Lafford, T.A. ; Brambilla, Angelo ; Verger, Loick ; Gros d´Aillon, Eric
Author_Institution :
Leti, CEA, Grenoble, France
Volume :
60
Issue :
1
fYear :
2013
fDate :
Feb. 2013
Firstpage :
199
Lastpage :
203
Abstract :
Microstructural defects in chlorine-doped cadmium telluride crystals (CdTe:Cl) can affect performance of CdTe-based radiation detectors. To study this, we produced a CdTe-based X-ray detector operating in integration mode. Its response under irradiation shows that sensitivity is non-uniform, dark-current maps were also observed. These indicate that charge carrier transport is heterogeneous. Advanced characterization tools, such as Infrared (IR) transmission and reflection microscopy and diffraction topography, were used for bulk and surface investigations. A clear correlation was established between the distribution of linear defects, such as dislocations and sub-grain-boundaries, and the localization of zones of non-uniform dark-current and photo-current in the sample.
Keywords :
II-VI semiconductors; X-ray apparatus; cadmium compounds; chlorine; dark conductivity; dislocations; grain boundaries; semiconductor counters; CdTe based radiation detectors; CdTe:Cl; cadmium telluride X-ray detectors; chlorine doped cadmium telluride crystals; dark current maps; diffraction topography; dislocation wall effects; dislocations; heterogeneous charge carrier transport; image quality; infrared reflection microscopy; infrared transmission microscopy; integration mode; irradiation response; linear defect distribution; microstructural defects; nonuniform sensitivity; subgrain boundaries; Correlation; Crystals; Detectors; Microscopy; Sensitivity; Surface topography; CdTe:Cl; X-ray detector; characterization; dislocation; etching; integration mode; topography;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2012.2232306
Filename :
6413251
Link To Document :
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