Multi-quantum well electro-optic modulator using a combination of excitonic index and absorption changes

Author

Yan, R.H. ; Simes, R.J. ; Geels, R.S. ; Coldren, Larry A. ; English, J.H. ; Gossard, Arthur C.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA

Volume

35

Issue

12

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

2446

Lastpage

2447

Abstract

Efficient reflection modulation, using index and absorption changes in a novel p-i-n surface-normal Fabry-Perot resonator configuration, is reported. A reverse bias changes both the absorption and the index of refraction by a tuning of the exciton resonance. In the resonator configuration, these effects cause both a shift in the position of the Fabry-Perot modes and a change in its Q, which can combine to enhance the net change in modulator reflectivity near the exciton lines. Further away from these exciton lines, the Fabry-Perot modes tune purely by index modulation

Keywords

electro-optical devices; integrated optoelectronics; optical modulation; refractive index; resonators; semiconductor quantum wells; Fabry-Perot modes shift; Fabry-Perot resonator configuration; Q-factor change; absorption changes; electro-optic modulator; exciton resonance tuning; excitonic index; index modulation; modulator reflectivity; multiquantum well type; p-i-n surface-normal resonator; reflection modulation; refractive index changes; reverse bias; Absorption; Electrooptic modulators; Excitons; Fabry-Perot; Flip-flops; Optical reflection; Optical resonators; Refractive index; Resonance; Sensor arrays;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.8873

Filename

8873