• DocumentCode
    1410826
  • Title

    An array of light-intensity sensors based on flip-flops

  • Author

    Lian, W.

  • Author_Institution
    Dept. of Electr. Eng., Delft Univ. of Technol., Netherlands
  • Volume
    35
  • Issue
    12
  • fYear
    1988
  • fDate
    12/1/1988 12:00:00 AM
  • Firstpage
    2447
  • Abstract
    A RAM-compatible light-intensity sensor array with a digital output, based on flip-flops consisting of silicon phototransistors and implanted resistors, is presented. The sensor is based on bringing a flip-flop into the highly sensitive unstable state, from which it will switch to a `one´ or `zero´, depending on the perturbation. The sensing elements are incorporated in the flip-flop to generate a perturbation. The advantages of the technique include a digital output, a high sensitivity, and a simple structure. By virtue of their small size, a large number of flip-flop sensors can be integrated in an array. The experimental device contained 64 flip-flops organized in an 8×8 matrix and was used for the measurement of a two-dimensional optical image. Performance and operating characteristics are reported
  • Keywords
    flip-flops; image sensors; monolithic integrated circuits; photodetectors; phototransistors; random-access storage; RAM-compatible; Si phototransistors; digital output; flip-flops; high sensitivity; image sensors; implanted resistors; light-intensity sensors; monolithic type; sensor array; two-dimensional optical image; Flip-flops; Optical arrays; Optical devices; Optical sensors; Phototransistors; Resistors; Sensor arrays; Sensor phenomena and characterization; Silicon; Switches;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.8874
  • Filename
    8874