DocumentCode
1410826
Title
An array of light-intensity sensors based on flip-flops
Author
Lian, W.
Author_Institution
Dept. of Electr. Eng., Delft Univ. of Technol., Netherlands
Volume
35
Issue
12
fYear
1988
fDate
12/1/1988 12:00:00 AM
Firstpage
2447
Abstract
A RAM-compatible light-intensity sensor array with a digital output, based on flip-flops consisting of silicon phototransistors and implanted resistors, is presented. The sensor is based on bringing a flip-flop into the highly sensitive unstable state, from which it will switch to a `one´ or `zero´, depending on the perturbation. The sensing elements are incorporated in the flip-flop to generate a perturbation. The advantages of the technique include a digital output, a high sensitivity, and a simple structure. By virtue of their small size, a large number of flip-flop sensors can be integrated in an array. The experimental device contained 64 flip-flops organized in an 8×8 matrix and was used for the measurement of a two-dimensional optical image. Performance and operating characteristics are reported
Keywords
flip-flops; image sensors; monolithic integrated circuits; photodetectors; phototransistors; random-access storage; RAM-compatible; Si phototransistors; digital output; flip-flops; high sensitivity; image sensors; implanted resistors; light-intensity sensors; monolithic type; sensor array; two-dimensional optical image; Flip-flops; Optical arrays; Optical devices; Optical sensors; Phototransistors; Resistors; Sensor arrays; Sensor phenomena and characterization; Silicon; Switches;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.8874
Filename
8874
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