Title :
Field-emission enhancement of Mo-tip field-emitted arrays fabricated by using a redox method
Author :
Lin, C.M. ; Chang, S.J. ; Yokoyama, M. ; I-Nan Lin ; Chen, J.F. ; Huang, B.R.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
This work has improved the emission characteristics for Mo-tips of field-emitter array (FEA) through a reduction-oxidation (redox) process. The maximum emission current of the 1600 tips array significantly increased from 23.2 μA to 2.36 mA with the turn-on voltage decreasing from 70 V to 48 V after the redox treatment. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) indicate that the main factor improving electron field emission characteristics for the Mo-tips is the increase in enhancement factor (/spl beta/) and, possibly, number of emission sites of Mo films.
Keywords :
electron field emission; molybdenum; scanning electron microscopy; transmission electron microscopy; vacuum microelectronics; 23.2 to 2.36 muA; 70 to 48 V; Mo; Mo-tip field-emitted arrays; SEM; TEM; enhancement factor; field-emission enhancement; maximum emission current; redox method fabrication; scanning electron microscopy; transmission electron microscopy; turn-on voltage; Electron emission; Field emitter arrays; Flat panel displays; Materials science and technology; Rough surfaces; Scanning electron microscopy; Substrates; Surface morphology; Surface roughness; Transmission electron microscopy;
Journal_Title :
Electron Device Letters, IEEE
