Field-emission enhancement of Mo-tip field-emitted arrays fabricated by using a redox method

Author

Lin, C.M. ; Chang, S.J. ; Yokoyama, M. ; I-Nan Lin ; Chen, J.F. ; Huang, B.R.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

21

Issue

12

fYear

2000

Firstpage

560

Lastpage

562

Abstract

This work has improved the emission characteristics for Mo-tips of field-emitter array (FEA) through a reduction-oxidation (redox) process. The maximum emission current of the 1600 tips array significantly increased from 23.2 μA to 2.36 mA with the turn-on voltage decreasing from 70 V to 48 V after the redox treatment. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) indicate that the main factor improving electron field emission characteristics for the Mo-tips is the increase in enhancement factor (/spl beta/) and, possibly, number of emission sites of Mo films.

Keywords

electron field emission; molybdenum; scanning electron microscopy; transmission electron microscopy; vacuum microelectronics; 23.2 to 2.36 muA; 70 to 48 V; Mo; Mo-tip field-emitted arrays; SEM; TEM; enhancement factor; field-emission enhancement; maximum emission current; redox method fabrication; scanning electron microscopy; transmission electron microscopy; turn-on voltage; Electron emission; Field emitter arrays; Flat panel displays; Materials science and technology; Rough surfaces; Scanning electron microscopy; Substrates; Surface morphology; Surface roughness; Transmission electron microscopy;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.887465

Filename

887465