Improved NiSi salicide process using presilicide N/sub 2//sup +/ implant for MOSFETs

Author

Lee, P.S. ; Pey, K.L. ; Mangelinck, D. ; Ding, J. ; Wee, A.T.S. ; Chan, L.

Author_Institution

Dept. of Mater. Sci., Nat. Univ. of Singapore, Singapore

Volume

21

Issue

12

fYear

2000

Firstpage

566

Lastpage

568

Abstract

An improved Ni salicide process has been developed by incorporating nitrogen (N/sub 2//sup +/) implant prior to Ni deposition to widen the salicide processing temperature window. Salicided poly-Si gate and active regions of different linewidths show improved thermal stability with low sheet resistance up to a salicidation temperature of 700 and 750/spl deg/C, respectively. Nitrogen was found to be confined within the NiSi layer and reduced agglomeration of the silicide. Phase transformation to the undesirable high resistivity NiSi/sub 2/ phase was delayed, likely due to a change in the interfacial energy. The electrical results of N/sub 2//sup +/ implanted Ni-salicided PMOSFETs show higher drive current and lower junction leakage as compared to devices with no N/sub 2//sup +/ implant.

Keywords

MOSFET; nickel alloys; silicon alloys; surface energy; thermal stability; 700 to 750 C; MOSFETs; NiSi; NiSi salicide process; higher drive current; interfacial energy; low sheet resistance; lower junction leakage; presilicide N/sub 2//sup +/ implant; thermal stability; CMOS technology; Conductivity; Delay; Electric resistance; Implants; MOSFETs; Nitrogen; Silicides; Temperature; Thermal resistance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.887467

Filename

887467