• DocumentCode
    1411029
  • Title

    Electronic properties of partially crystalline SiOx suboxide films

  • Author

    Wilk, G.D. ; Brar, B.

  • Author_Institution
    Lucent Technol. Bell Labs., Murray Hill, NJ, USA
  • Volume
    21
  • Issue
    12
  • fYear
    2000
  • Firstpage
    569
  • Lastpage
    571
  • Abstract
    Partially crystalline, silicon suboxide (SiO/sub x/, 0\n\n\t\t
  • Keywords
    etching; insulating thin films; oxidation; silicon compounds; 480 meV; Si; SiO; current transport; electronic properties; etching; oxidation; partially crystalline SiO/sub x/ suboxide films; substrate temperature; temperature-dependent current-voltage measurements; transmission electron microscopy; zero-bias activation energy; Crystallization; Electrons; Etching; Insulation; Kinetic theory; Oxidation; Semiconductor films; Silicon; Substrates; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.887468
  • Filename
    887468
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1411029