Anomalous diffusion of boron in silicon driven under the N/sub 2/O ambient

Author

Don-Gey Liu ; Wen Luh Yang ; Jiang-Shihn Tsang ; Kuo Wei Chu ; Miin-Shyue Shiau ; Yu Ming Hung

Author_Institution

Inst. & Dept. of Electron. Eng., Feng Chia Univ., Taichung, Taiwan

Volume

21

Issue

12

fYear

2000

Firstpage

572

Lastpage

574

Abstract

In this letter, p/sup +//n junctions formed by a solid source of a boron-doped layer under different ambient gases will be demonstrated. In this study, it was found that the obtained junction depth depends strongly on the ambient gas. Especially in the N/sub 2/O ambient, the diffusion of boron is enormously enhanced. The resulting junction depth can be as high as eight times of those junctions formed in N/sub 2/. Such phenomenon is much more profound than the well-known oxidation-enhanced diffusion (OED) effect of O/sub 2/. We call this new effect as the nitri-oxidation-enhanced diffusion (NOED) effect. As a consequence, it is proposed that the NOED effect is instrumental for low-cost fabrication of well structures in the CMOS technology.

Keywords

CMOS integrated circuits; boron; diffusion; elemental semiconductors; p-n junctions; rapid thermal processing; secondary ion mass spectra; silicon; CMOS technology; N/sub 2/O; N/sub 2/O ambient; Si:B; anomalous diffusion; junction depth; low-cost fabrication; nitri-oxidation-enhanced diffusion; p/sup +//n junctions; well structures; Boron; CMOS technology; Circuits; Fabrication; Gases; Instruments; Semiconductor impurities; Silicon; Solids; Ultra large scale integration;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.887469

Filename

887469