Title :
Current-source a-Si:H thin-film transistor circuit for active-matrix organic light-emitting displays
Author :
He, Y. ; Hattori, R. ; Kanicki, J.
Author_Institution :
Appl. Phys. Program, Michigan Univ., Ann Arbor, MI, USA
Abstract :
We describe a four thin-film-transistor (TFT) circuit based on hydrogenated amorphous silicon (a-Si:H) technology. This circuit can provide a constant output current level and can be automatically adjusted for TFT threshold voltage variations. The experimental results indicated that, for TFT threshold voltage shift as large as /spl sim/3 V, the output current variations can be less than 1 and 5% for high (/spl ges/0.5 μA) and low (/spl les/0.1 μA) current levels, respectively. This circuit can potentially be used for the active-matrix organic light-emitting displays (AM-OLEDs).
Keywords :
amorphous semiconductors; elemental semiconductors; integrated optoelectronics; light emitting diodes; silicon; thin film transistors; Si:H; active-matrix organic LED; current source TFT circuit; hydrogenated amorphous silicon; output current; thin-film transistor circuit; threshold voltage shift; Active matrix technology; Amorphous silicon; Flat panel displays; Laboratories; Light emitting diodes; Organic light emitting diodes; Physics; Solid state circuits; Thin film transistors; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
