• DocumentCode
    1411097
  • Title

    Impact of the S/D extension doping profile on the /spl Psi/-cell concept

  • Author

    Kamoulakos, G. ; McCarthy, D. ; Papadas, C. ; Arapoyanni, A.

  • Author_Institution
    ISD S.A., Athens, Greece
  • Volume
    21
  • Issue
    12
  • fYear
    2000
  • Firstpage
    596
  • Lastpage
    597
  • Abstract
    The viability of the /spl Psi/-cell concept that has been proposed for CMOS embedded flash applications is examined as the CMOS dimensions shrink down. More specifically, we focus on the dependence of the memory operation on the doping profile underneath the spacer. We show that for optimum operation of the /spl Psi/-cell concept below 0.18 μm CMOS technologies, the S/D extension implantation process step should be omitted.
  • Keywords
    CMOS memory circuits; doping profiles; flash memories; ion implantation; semiconductor doping; /spl Psi/-cell concept; 0.18 mum; CMOS dimensions; CMOS embedded flash applications; S/D extension doping profile; S/D extension implantation process step; doping profile; memory operation; spacer; CMOS process; CMOS technology; Character generation; Doping profiles; EPROM; Electrons; MOSFETs; Space technology; Threshold voltage; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.887477
  • Filename
    887477
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1411097