Roughness-enhanced electroluminescence from metal oxide silicon tunneling diodes

Author

Liu, C.W. ; Lee, M.H. ; Chen, Miin-Jang ; Lin, Ching-Fuh ; Chern, M.Y.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

21

Issue

12

fYear

2000

Firstpage

601

Lastpage

603

Abstract

An approximate two-order increase in magnitude in electroluminescence was observed for the metal-oxide-silicon tunneling diodes with oxide grown at 900/spl deg/C, as compared to 1000/spl deg/C. The X-ray reflectivity revealed that the oxide grown at 900/spl deg/C has rougher interface than that grown at 1000/spl deg/C. The role of interface roughness can be understood in a model composed of phonons and interface roughness. An external quantum efficiency of /spl sim/10/sup -6/ was obtained using Al electrodes.

Keywords

X-ray reflection; aluminium; electroluminescence; elemental semiconductors; interface phonons; interface roughness; light emitting diodes; semiconductor device measurement; silicon; silicon compounds; tunnel diodes; 1000 C; 900 C; Al electrodes; Si-SiO/sub 2/-Al; X-ray reflectivity; electroluminescence; external quantum efficiency; interface roughness; metal oxide silicon tunneling diodes; metal-oxide-silicon tunneling diodes; phonons; rough interface; roughness-enhanced electroluminescence; Electrodes; Electroluminescence; Light emitting diodes; MOS devices; Phonons; Reflectivity; Rough surfaces; Silicon; Surface roughness; Tunneling;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.887479

Filename

887479