A novel trench clustered insulated gate bipolar transistor (TCIGBT)

Author

Spulber, O. ; Sweet, M. ; Vershinin, K. ; Ngw, C.K. ; Ngwendson, L. ; Bose, J.V.S.C. ; De Souza, M.M. ; Narayanan, E. M Sankara

Author_Institution

Emerging Technol. Res. Centre, De Montfort Univ., Leicester, UK

Volume

21

Issue

12

fYear

2000

Firstpage

613

Lastpage

615

Abstract

A new trench clustered insulated gate bipolar transistor (TCIGBT) is reported. In this device, a multitude of UMOS cathode cells is enclosed within a common n-well and p-well. The TCIGBT provides a unique "self-clamping" feature to protect the trenches from high electric fields. The simulation results based on 1.2 kV nonpunchthrough technology indicate an improvement of 25% in on state and 28% in the turn-off losses in comparison to the state-of-the-art trench IGBT. The saturation current levels of the TCIGBT, which can be designed independent of the forward drop, are also lower.

Keywords

insulated gate bipolar transistors; semiconductor device breakdown; semiconductor device models; 1.2 kV; TCIGBT; UMOS cathode cells; common n-well; high electric fields; nonpunchthrough technology; on state; p-well; saturation current; self-clamping; simulation; trench clustered insulated gate bipolar transistor; trenches; turn-off losses; Anodes; Breakdown voltage; Cathodes; Insulated gate bipolar transistors; Low voltage; MOSFET circuits; Performance analysis; Protection; Testing; Thyristors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.887483

Filename

887483