DocumentCode :
1411149
Title :
Correction to "A 20-nm physical gate length NMOSFET featuring 1.2-nm gate oxide, shallow implanted source and drain and BF
2
pockets"
Volume :
21
Issue :
12
fYear :
2000
Firstpage :
616
Lastpage :
616
Abstract :
Fig. 2 in the above-named paper was misprinted. The corrected Fig. 2 is provided.
Keywords :
MOSFET circuits;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2000.887484
Filename :
887484
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1411149