DocumentCode :
1411402
Title :
High Hole-Mobility Strained- 
P-MOSFETs With High-K/Metal Gate: Role of Strained-Si Cap Thickness
Author :
Hashemi, Pouya ; HOyt, Judy L.
Author_Institution :
Microsyst. Technol. Labs., Massachusetts Inst. of Technol., Cambridge, MA, USA
Volume :
33
Issue :
2
fYear :
2012
Firstpage :
173
Lastpage :
175
Abstract :
Low-field effective hole mobility of highly strained (~2.4%, biaxial) germanium-channel (7.8 nm-thick) p-MOSFETs with high-K/metal gate stack has been experimentally investigated. Devices with various ultrathin strained-Si cap layer thicknesses, as thin as ~8 Å, show excellent capacitance-voltage characteristics with no hysteresis or frequency dispersion and hole mobility enhancement of more than 6.5X over Si universal and 2.3X over similar devices with no strained-Si cap, at Eeff = 0.6 MV/cm. The influence of the strained-Si cap thickness on the hole mobility is also studied. The mobility increases with increasing Si cap thickness up to ~1.8 nm (with a peak mobility of 940 cm2/Vs at this cap thickness) consistent with a reduction in remote Coulombic scattering.
Keywords :
Ge-Si alloys; MOSFET; high-k dielectric thin films; Ge-Si0.6Ge0.4; capacitance-voltage characteristics; high hole-mobility strained P-MOSFET; high-k-metal gate stack; remote Coulombic scattering reduction; size 7.8 nm; ultrathin strained-cap layer thicknesses; Logic gates; MOSFET circuits; MOSFETs; Metals; Silicon; Strain; Temperature measurement; High-K; SiGe; metal gate; mobility; strained-Ge (s-Ge);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2176913
Filename :
6118306
Link To Document :
