DocumentCode
1411600
Title
Continuous-wave operation of singlemode GaInAsSb lasers emitting near 2.2 μm at Peltier temperatures
Author
Popov, A.A. ; Sherstnev, V.V. ; Baranov, A.N. ; Alibert, C. ; Yakovlev, Yu.P.
Author_Institution
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
Volume
34
Issue
14
fYear
1998
fDate
7/9/1998 12:00:00 AM
Firstpage
1398
Lastpage
1399
Abstract
A continuous-wave regime, lasing near 2.2 μm, has been achieved for single longitudinal mode GaInAsSb double heterostructure lasers mounted on a Peltier cooler. In the pulsed regime the lasers exhibited a characteristic temperature of the threshold current as high as 132 K at heatsink temperatures up to 60°C
Keywords
III-V semiconductors; Peltier effect; cooling; gallium arsenide; gallium compounds; indium compounds; laser modes; laser transitions; semiconductor lasers; 132 K; 2.2 micron; 60 C; CW operation; GaInAsSb-GaAlAsSb; Peltier cooler; Peltier temperatures; characteristic temperature; continuous-wave regime; double heterostructure lasers; heatsink temperatures; pulsed regime; single longitudinal mode; singlemode GaInAsSb lasers; threshold current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19980982
Filename
706093
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