Superlattice barrier 1528-nm vertical-cavity laser with 85/spl deg/C continuous-wave operation

Author

Karim, A. ; Black, K.A. ; Abraham, P. ; Lofgreen, D.E. ; Chiu, Y.J. ; Piprek, J.A. ; Bowers, J.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

12

Issue

11

fYear

2000

Firstpage

1438

Lastpage

1440

Abstract

We report 85/spl deg/C continuous-wave electrically pumped operation of a 1528-nm vertical-cavity laser. An InP-InGaAsP active region was wafer bonded to the GaAs-AlGaAs mirrors, with a superlattice barrier to reduce the defect density in the active region.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; laser mirrors; optical fabrication; semiconductor lasers; semiconductor superlattices; surface emitting lasers; 1528 nm; 85 C; GaAs-AlGaAs; GaAs-AlGaAs mirrors; InP-InGaAsP; InP-InGaAsP active region; active region; continuous-wave electrically pumped operation; continuous-wave operation; defect density; superlattice barrier; superlattice barrier vertical-cavity laser; vertical-cavity laser; wafer bonding; Fiber lasers; Luminescence; Mirrors; Optical surface waves; Pump lasers; Quantum well devices; Superlattices; Surface emitting lasers; Vertical cavity surface emitting lasers; Wafer bonding;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.887642

Filename

887642