Title :
Short wavelength bottom-emitting vertical cavity lasers fabricated using wafer bonding
Author :
Choquette, K.D. ; Geib, K.M. ; Roberds, B. ; Hou, H.Q. ; Twesten, R.D. ; Hammons, B.E.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fDate :
7/9/1998 12:00:00 AM
Abstract :
Selectively oxidised 850 nm vertical cavity surface emitting laser diodes which emit through transparent n-type GaP and AlGaAs substrates are reported. The short wavelength bottom-emitting lasers are fabricated using a low temperature inert gas wafer fusion process. Compared to top-emitting lasers, the bottom-emitting lasers bonded to n-type AlGaAs substrates show comparable electrical characteristics, while lasers bonded to n-type GaP substrates exhibit higher series resistance and voltage
Keywords :
optical fabrication; oxidation; semiconductor lasers; surface emitting lasers; wafer bonding; 850 nm; AlGaAs; GaP; electrical characteristics; fabrication; low temperature inert gas wafer fusion; n-type AlGaAs substrate; n-type GaP substrate; selective oxidation; series resistance; short wavelength bottom-emitting vertical cavity laser; transparent substrate; vertical cavity surface emitting laser diode; wafer bonding;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981002
