Single transverse-mode filtering utilizing ion implantation: application to 1.48-μm unstable-cavity lasers

Author

Gerard, F. ; Delepine, S. ; Bissessur, H. ; Locatelli, D. ; Fillion, T. ; Bouche, N. ; Salet, P.

Author_Institution

OPTO, Economique Alcatel Corp. Res. Center, Marcoussis, France

Volume

12

Issue

11

fYear

2000

Firstpage

1447

Lastpage

1449

Abstract

We demonstrate the relevance of ion implantation of the multiple quantum-well active layer in unstable-cavity lasers as a means of efficiently filtering the parasitic higher order waves by introducing additional propagation loss within the cavity. Several H/sup +/ implantation schemes are proposed and a comparison is successfully made of experiment to a beam propagation method (BPM) model on the basis of modal behavior. The work finally resulted in improved single transverse-mode behavior of those lasers: more than 1.3 W CW of diffraction-limited power at 1.48 μm was then obtained utilizing a two-step implantation process.

Keywords

ion implantation; laser beams; laser cavity resonators; laser modes; laser stability; optical filters; optical losses; quantum well lasers; ridge waveguides; waveguide lasers; 1.48 mum; H/sup +/ implantation schemes; beam propagation method; cavity; diffraction-limited power; filtering; ion implantation; modal behavior; multiple quantum-well active layer; parasitic higher order waves; propagation loss; single transverse-mode behavior; single transverse-mode filtering; two-step implantation process; unstable-cavity lasers; Filtering; Ion implantation; Laser modes; Optical filters; Optical resonators; Optical waveguide theory; Optical waveguides; Power lasers; Protons; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.887649

Filename

887649