Title :
Single transverse-mode filtering utilizing ion implantation: application to 1.48-μm unstable-cavity lasers
Author :
Gerard, F. ; Delepine, S. ; Bissessur, H. ; Locatelli, D. ; Fillion, T. ; Bouche, N. ; Salet, P.
Author_Institution :
OPTO, Economique Alcatel Corp. Res. Center, Marcoussis, France
Abstract :
We demonstrate the relevance of ion implantation of the multiple quantum-well active layer in unstable-cavity lasers as a means of efficiently filtering the parasitic higher order waves by introducing additional propagation loss within the cavity. Several H/sup +/ implantation schemes are proposed and a comparison is successfully made of experiment to a beam propagation method (BPM) model on the basis of modal behavior. The work finally resulted in improved single transverse-mode behavior of those lasers: more than 1.3 W CW of diffraction-limited power at 1.48 μm was then obtained utilizing a two-step implantation process.
Keywords :
ion implantation; laser beams; laser cavity resonators; laser modes; laser stability; optical filters; optical losses; quantum well lasers; ridge waveguides; waveguide lasers; 1.48 mum; H/sup +/ implantation schemes; beam propagation method; cavity; diffraction-limited power; filtering; ion implantation; modal behavior; multiple quantum-well active layer; parasitic higher order waves; propagation loss; single transverse-mode behavior; single transverse-mode filtering; two-step implantation process; unstable-cavity lasers; Filtering; Ion implantation; Laser modes; Optical filters; Optical resonators; Optical waveguide theory; Optical waveguides; Power lasers; Protons; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
