Title :
70 GHz InGaAs metal-semiconductor-metal photodetectors for polarisation-insensitive operation
Author :
Droge, E. ; Bottcher, E.H. ; Bimberg, D. ; Reimann, O. ; Steingruber, R.
Author_Institution :
Inst. fur Festkorperphys., Univ. Berlin, Germany
fDate :
7/9/1998 12:00:00 AM
Abstract :
InGaAs metal-semiconductor-metal photodetectors with 0.2 μm feature size finger electrodes have been fabricated. A pulse response time of 3.8 ps for 1.55 μm light was measured by means of electro-optical sampling. A 3 dB bandwidth of 70 GHz was extracted from the time domain data. Polarisation-insensitive operation under front illumination was obtained by employing semicircular-type finger electrodes for the photodetectors with a 14 μm diameter active area
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; metal-semiconductor-metal structures; photodetectors; 0.2 micron; 1.55 micron; 3.8 ps; 70 GHz; InGaAs; InGaAs metal-semiconductor-metal photodetector; electro-optical sampling; finger electrode; polarisation-insensitive operation; pulse response time;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980992
