Title :
1.3 μm GaInAsP SL-QW Al-oxide confined inner stripe lasers on p-InP substrate with AlInAs-oxide confinement layer
Author :
Iwai, N. ; Mukaihara, T. ; Itoh, M. ; Yamanaka, N. ; Arakawa, S. ; Shimizu, H. ; Kasukawa, A.
Author_Institution :
R&D Lab., Furukawa Electr. Co. Ltd., Yokohama, Japan
fDate :
7/9/1998 12:00:00 AM
Abstract :
The authors have fabricated a 1.3 μm GaInAsP strained-layer QW (Al-oxide confined inner stripe) laser on a p-InP substrate using an AlInAs-oxide layer for the first time. A low threshold current of 6.8 mA, a high slope efficiency of 0.55 W/A and single lateral mode operation were obtained. Both low threshold and single lateral mode operations indicate that real-index inner stripe structure could be realised using AlInAs-oxide
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; laser transitions; quantum well lasers; 1.3 micron; 6.8 mA; AlInAs; AlInAs-oxide confinement layer; GaInAsP; GaInAsP lasers; InP; SL-QW Al-oxide confined laser; p-InP substrate; real-index inner stripe structure; semiconductor laser; single lateral mode operation; strained-layer quantum well; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981006
