DocumentCode
1411760
Title
1.3 μm GaInAsP SL-QW Al-oxide confined inner stripe lasers on p-InP substrate with AlInAs-oxide confinement layer
Author
Iwai, N. ; Mukaihara, T. ; Itoh, M. ; Yamanaka, N. ; Arakawa, S. ; Shimizu, H. ; Kasukawa, A.
Author_Institution
R&D Lab., Furukawa Electr. Co. Ltd., Yokohama, Japan
Volume
34
Issue
14
fYear
1998
fDate
7/9/1998 12:00:00 AM
Firstpage
1427
Lastpage
1428
Abstract
The authors have fabricated a 1.3 μm GaInAsP strained-layer QW (Al-oxide confined inner stripe) laser on a p-InP substrate using an AlInAs-oxide layer for the first time. A low threshold current of 6.8 mA, a high slope efficiency of 0.55 W/A and single lateral mode operation were obtained. Both low threshold and single lateral mode operations indicate that real-index inner stripe structure could be realised using AlInAs-oxide
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; laser transitions; quantum well lasers; 1.3 micron; 6.8 mA; AlInAs; AlInAs-oxide confinement layer; GaInAsP; GaInAsP lasers; InP; SL-QW Al-oxide confined laser; p-InP substrate; real-index inner stripe structure; semiconductor laser; single lateral mode operation; strained-layer quantum well; threshold current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19981006
Filename
706119
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