Characterising and modelling thermal behaviour of radio-frequency power LDMOS transistors

Author

Collantes, J.M. ; Bouysse, Ph ; Quere, R.

Author_Institution

Dept. de Electr. y Electron., Pais Vasco Univ., Bilbao, Spain

Volume

34

Issue

14

fYear

1998

fDate

7/9/1998 12:00:00 AM

Firstpage

1428

Lastpage

1430

Abstract

The thermal behaviour of radio-frequency power LDMOS transistors is analysed. Pulsed characterisation techniques are proposed to provide a straightforward method for determining the device zero temperature coefficient point. An LDMOS technology currently used for power amplification in L-band radiotelephony applications is studied. Load-pull measurements and nonlinear simulations are used to determine the bias conditions for stable operation with temperature. Finally, a model is proposed to take into account the influence of the dissipated power on the device responses during nonlinear operation

Keywords

UHF field effect transistors; power MOSFET; semiconductor device models; semiconductor device testing; thermal analysis; thermal stability; L-band; RF power LDMOS transistors; bias conditions; device zero temperature coefficient point; dissipated power; load-pull measurements; modelling; nonlinear operation; nonlinear simulations; pulsed characterisation techniques; radiofrequency power transistors; stable operation; thermal behaviour;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19980975

Filename

706120