• DocumentCode
    1411775
  • Title

    CW-laser crystallisation of amorphous SiC alloys

  • Author

    Palma, C. ; Rossi, M.C. ; Sapia, C.

  • Author_Institution
    Dipt. di Fisica, Rome Univ., Italy
  • Volume
    34
  • Issue
    14
  • fYear
    1998
  • fDate
    7/9/1998 12:00:00 AM
  • Firstpage
    1430
  • Lastpage
    1431
  • Abstract
    CW-laser crystallisation of amorphous silicon carbon alloys has been performed. It is shown that crystalline SiC can be obtained by irradiating nearly stoichiometric alloys, whereas phase segregation effects occur in silicon-rich alloys
  • Keywords
    amorphous semiconductors; crystallisation; laser beam effects; segregation; silicon compounds; CW laser crystallisation; SiC; amorphous silicon carbon alloy; phase segregation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19980974
  • Filename
    706121