• DocumentCode
    1411794
  • Title

    Picosecond switching due to electron tunnelling and avalanche in GaAs/AlxGa1-xAs diode

  • Author

    Geizutis, A. ; Krotkus, A. ; Reklaitis, A. ; Asche, M.

  • Author_Institution
    Semicond. Phys. Lab., Vilnius, Lithuania
  • Volume
    34
  • Issue
    14
  • fYear
    1998
  • fDate
    7/9/1998 12:00:00 AM
  • Firstpage
    1434
  • Lastpage
    1436
  • Abstract
    A new semiconductor heterostructure diode with an S-type current-voltage characteristic that can be used for high-speed voltage switching is proposed and demonstrated. This behaviour is caused by the electrons tunnelling through the potential barrier and initiating avalanche multiplication in a small energy gap base region
  • Keywords
    semiconductor diodes; GaAs-AlGaAs; S-type current-voltage characteristic; avalanche multiplication; electron tunnelling; high-speed voltage switching; picosecond switching; potential barrier; semiconductor heterostructure diode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19981001
  • Filename
    706124
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1411794