DocumentCode :
1411799
Title :
Two-dimensional analysis of carrier-blocking effect on cutoff frequency characteristics of collector-up AlGaAs/GaAs HBTs
Author :
Horio, K. ; Kurosawa, N.
Author_Institution :
Fac. of Syst. Eng., Shibaura Inst. of Technol., Tokyo, Japan
Volume :
34
Issue :
14
fYear :
1998
fDate :
7/9/1998 12:00:00 AM
Firstpage :
1436
Lastpage :
1437
Abstract :
Two-dimensional simulation of cutoff frequency (fτ) characteristics in collector-up AlGaAs/GaAs heterojunction bipolar transistors is performed for various collector widths and different base-electrode positions. By putting the base electrode closer to the intrinsic collector, the degradation in fτ resulting from the so-called carrier-blocking effect is shown to be suppressed
Keywords :
III-V semiconductors; aluminium compounds; current density; electron density; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; 2D simulation; AlGaAs-GaAs; base-electrode positions; carrier-blocking effect; collector widths; collector-up HBTs; cutoff frequency characteristics; heterojunction bipolar transistors; two-dimensional analysis;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19980892
Filename :
706125
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1411799
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