DocumentCode :
1411812
Title :
Measured results on bandgap reference in SiGe BiCMOS
Author :
Ainspan, H.A. ; Webster, C.S.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Volume :
34
Issue :
15
fYear :
1998
fDate :
7/23/1998 12:00:00 AM
Firstpage :
1441
Lastpage :
1442
Abstract :
The measured temperature and supply voltage dependences of a bandgap reference (BGR) circuit first published by Gilbert (1996) and implemented in IBM´s SiGe BiCMOS process agree well with model predictions. The plot of VBGR against temperature exhibits less curvature than predicted elsewhere for SiGe BGRs
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; reference circuits; semiconductor materials; SiGe; SiGe BiCMOS process; bandgap reference circuit; model predictions; supply voltage dependence; temperature dependence;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19981061
Filename :
706204
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1411812
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