• DocumentCode
    1411812
  • Title

    Measured results on bandgap reference in SiGe BiCMOS

  • Author

    Ainspan, H.A. ; Webster, C.S.

  • Author_Institution
    IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
  • Volume
    34
  • Issue
    15
  • fYear
    1998
  • fDate
    7/23/1998 12:00:00 AM
  • Firstpage
    1441
  • Lastpage
    1442
  • Abstract
    The measured temperature and supply voltage dependences of a bandgap reference (BGR) circuit first published by Gilbert (1996) and implemented in IBM´s SiGe BiCMOS process agree well with model predictions. The plot of VBGR against temperature exhibits less curvature than predicted elsewhere for SiGe BGRs
  • Keywords
    BiCMOS analogue integrated circuits; Ge-Si alloys; reference circuits; semiconductor materials; SiGe; SiGe BiCMOS process; bandgap reference circuit; model predictions; supply voltage dependence; temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19981061
  • Filename
    706204
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1411812