Title :
Accurate equivalent circuit model of resonant tunnelling diodes
Author :
Miles, R.E. ; Millington, G. ; Pollard, R.D. ; Steenson, D.P. ; Chamberlain, J.M. ; Henini, M.
Author_Institution :
Dept. of Electron. & Electr. Eng., Leeds Univ., UK
Abstract :
An equivalent circuit model of the resonant tunnelling diode is presented which is derived from measurements over a frequency range from 45 MHz to 12 GHz. The model is valid for a wide range of bias voltages including the region of negative differential resistance and contains elements which, although varying with the applied voltage, do not depend on frequency. The configuration of the model is shown to be a good representation of the processes occurring in the device.
Keywords :
equivalent circuits; negative resistance; resonant tunnelling devices; semiconductor device models; solid-state microwave devices; tunnel diodes; 45 MHz to 12 GHz; NDR; RTD; derived from measurements; equivalent circuit model; frequency range; negative differential resistance region; range of bias voltages; resonant tunnelling diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910270
