• DocumentCode
    1411859
  • Title

    Accurate equivalent circuit model of resonant tunnelling diodes

  • Author

    Miles, R.E. ; Millington, G. ; Pollard, R.D. ; Steenson, D.P. ; Chamberlain, J.M. ; Henini, M.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Leeds Univ., UK
  • Volume
    27
  • Issue
    5
  • fYear
    1991
  • Firstpage
    427
  • Lastpage
    428
  • Abstract
    An equivalent circuit model of the resonant tunnelling diode is presented which is derived from measurements over a frequency range from 45 MHz to 12 GHz. The model is valid for a wide range of bias voltages including the region of negative differential resistance and contains elements which, although varying with the applied voltage, do not depend on frequency. The configuration of the model is shown to be a good representation of the processes occurring in the device.
  • Keywords
    equivalent circuits; negative resistance; resonant tunnelling devices; semiconductor device models; solid-state microwave devices; tunnel diodes; 45 MHz to 12 GHz; NDR; RTD; derived from measurements; equivalent circuit model; frequency range; negative differential resistance region; range of bias voltages; resonant tunnelling diodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910270
  • Filename
    64305
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1411859