DocumentCode
1412031
Title
Novel Cu–Cu Bonding Technique: The Insertion Bonding Approach
Author
Okoro, Chukwudi ; Limaye, Paresh ; Agarwal, Rahul ; Vandevelde, Bart ; Beyne, Eric ; Vandepitte, Dirk
Author_Institution
Interuniv. Microelectron. Center, Leuven, Belgium
Volume
1
Issue
12
fYear
2011
Firstpage
1885
Lastpage
1894
Abstract
A novel low-temperature Cu-Cu bonding approach called the insertion bonding technique has been developed. This technique hinges on the introduction of a tangential pressure at the metal-metal interface, which leads to a high localized plastic deformation that is essential for bond formation. Through finite element modeling studies, it is observed that the insertion bonding technique results in a significantly larger plastic deformation in comparison to the conventional bonding technique under the same bonding conditions. First experimental studies of the insertion bonding technique were performed and it is observed that an electrically yielding Cu-Cu joint is achieved at a low bonding temperature of 100°C. This shows that the insertion bonding technique holds much promise for low-temperature Cu-Cu bonding.
Keywords
copper; finite element analysis; integrated circuit interconnections; integrated circuit packaging; plastic deformation; wafer bonding; Cu-Cu; bond formation; finite element modeling; insertion bonding; low-temperature Cu-Cu bonding; metal-metal interface; plastic deformation; tangential pressure; temperature 100 degC; Bonding; Contacts; Force; Plastics; Strain; Through-silicon vias; 3-D Stacking; Cu–Cu bonding; finite element modeling; interconnect; through-silicon via;
fLanguage
English
Journal_Title
Components, Packaging and Manufacturing Technology, IEEE Transactions on
Publisher
ieee
ISSN
2156-3950
Type
jour
DOI
10.1109/TCPMT.2011.2158547
Filename
6119123
Link To Document