• DocumentCode
    1412031
  • Title

    Novel Cu–Cu Bonding Technique: The Insertion Bonding Approach

  • Author

    Okoro, Chukwudi ; Limaye, Paresh ; Agarwal, Rahul ; Vandevelde, Bart ; Beyne, Eric ; Vandepitte, Dirk

  • Author_Institution
    Interuniv. Microelectron. Center, Leuven, Belgium
  • Volume
    1
  • Issue
    12
  • fYear
    2011
  • Firstpage
    1885
  • Lastpage
    1894
  • Abstract
    A novel low-temperature Cu-Cu bonding approach called the insertion bonding technique has been developed. This technique hinges on the introduction of a tangential pressure at the metal-metal interface, which leads to a high localized plastic deformation that is essential for bond formation. Through finite element modeling studies, it is observed that the insertion bonding technique results in a significantly larger plastic deformation in comparison to the conventional bonding technique under the same bonding conditions. First experimental studies of the insertion bonding technique were performed and it is observed that an electrically yielding Cu-Cu joint is achieved at a low bonding temperature of 100°C. This shows that the insertion bonding technique holds much promise for low-temperature Cu-Cu bonding.
  • Keywords
    copper; finite element analysis; integrated circuit interconnections; integrated circuit packaging; plastic deformation; wafer bonding; Cu-Cu; bond formation; finite element modeling; insertion bonding; low-temperature Cu-Cu bonding; metal-metal interface; plastic deformation; tangential pressure; temperature 100 degC; Bonding; Contacts; Force; Plastics; Strain; Through-silicon vias; 3-D Stacking; Cu–Cu bonding; finite element modeling; interconnect; through-silicon via;
  • fLanguage
    English
  • Journal_Title
    Components, Packaging and Manufacturing Technology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    2156-3950
  • Type

    jour

  • DOI
    10.1109/TCPMT.2011.2158547
  • Filename
    6119123