Compatibility of Dielectric Passivation and Temporary Bonding Materials for Thin Wafer Handling in 3-D TSV Integration

Author

Lee, Jaesik ; Seetoh, Justin ; Li, Hong Yu ; Lee, Vincent ; Yeo, Yen Chen ; Lau, Guan Kian ; Teo, Keng Hwa ; Gao, Shan

Author_Institution

Res. Inst. of the Agency for Sci., Technol. & Res., Inst. of Microelectron., Singapore, Singapore

Volume

1

Issue

12

fYear

2011

Firstpage

1988

Lastpage

1995

Abstract

The effects of temporary bonding processes on thin wafer handling were investigated. Backside dielectric curing process was found to be a critical process for the void formation in the thin wafer handling which was confirmed by scanning acoustic microscope and by thermo-gravimetric analyzer out-gassing analysis. The effects of voids on back-side wafer processes were discussed. Finally, 3-D through silicon via integration with thin wafer handling (50 μm in thickness) was demonstrated with selected dielectric passivation material and temporary bonding adhesives.

Keywords

bonding processes; dielectric materials; three-dimensional integrated circuits; 3D TSV integration; 3D through silicon via integration; acoustic microscope; back-side wafer processes; backside dielectric curing process; dielectric passivation compatibility; dielectric passivation material; size 50 mum; temporary bonding adhesives; temporary bonding materials; thermo-gravimetric analyzer out-gassing analysis; thin wafer handling; void formation; Bonding; Copper; Dielectrics; Heat treatment; Materials; Passivation; Through-silicon vias; 3-D integration; microbump; temporary bonding and de-bonding; thin wafer handling; through silicon via;

fLanguage

English

Journal_Title

Components, Packaging and Manufacturing Technology, IEEE Transactions on

Publisher

ieee

ISSN

2156-3950

Type

jour

DOI

10.1109/TCPMT.2011.2162435

Filename

6119128