Title :
Room-temperature continuous-wave operation of GaInN/GaN multiquantum well laser diode
Author :
Kobayashi, T. ; Nakamura, F. ; Naganuma, K. ; Tojyo, T. ; Nakajima, H. ; Asatsuma, T. ; Kawai, H. ; Ikeda, M.
Author_Institution :
Res. Center, Sony Corp., Yokohama, Japan
fDate :
7/23/1998 12:00:00 AM
Abstract :
Continuous-wave operation at room temperature was demonstrated in a GaInN/GaN multiquantum well (MQW) laser grown by metal organic chemical vapour deposition (MOCVD) using a horizontal reactor. The laser structure was grown on a (0001) c-plane sapphire substrate. A 1 mm long cavity with a 4 μm wide ridge stripe was formed by cleaving along the (11-20) plane of the GaInNiGaN epitaxial layers. Stimulated emission was observed at a wavelength of 411 nm with a threshold current density of 11.7 kA/cm2
Keywords :
III-V semiconductors; current density; gallium compounds; indium compounds; quantum well lasers; semiconductor epitaxial layers; stimulated emission; vapour phase epitaxial growth; (0001) c-plane sapphire substrate; (11-20) plane; 1 mm; 4 micron; 411 nm; GaInN-GaN; GaInN/GaN multiquantum well laser diode; cavity; cleaving; epitaxial layers; horizontal reactor; laser structure; metal organic chemical vapour deposition; ridge stripe; room-temperature continuous-wave operation; stimulated emission; threshold current density; wavelength;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981063
