DocumentCode
1412074
Title
Room-temperature pulsed operation of strained GaInNAs/GaAs double quantum well laser diode grown by metal organic chemical vapour deposition
Author
Sato, S. ; Satoh, S.
Author_Institution
Gen. Electron. Res & Dev. Center, Ricoh Co. Ltd., Miyagi, Japan
Volume
34
Issue
15
fYear
1998
fDate
7/23/1998 12:00:00 AM
Firstpage
1495
Lastpage
1497
Abstract
A strained GaInNAs/GaAs double quantum-well laser is developed by metal organic chemical vapour deposition. Almost 1.2 μm at room-temperature under pulsed operation is demonstrated. The threshold current density is lower than that of a laser with a GaInNAs bulk active layer
Keywords
quantum well lasers; 1.2 mum; GaInNAs-GaAs; metal organic chemical vapour deposition; room-temperature pulsed operation; strained GaInNAs/GaAs double quantum well laser diode; threshold current density;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19981034
Filename
706246
Link To Document