Title :
Advanced Surface Laminar Circuits Using Newly Developed Resins
Author :
Hayashi, Katsura ; Yamanaka, Kimihiro ; Kobayashi, Kaoru ; Hosoi, Yoshihiro ; Fukui, Masahiro
Author_Institution :
Adv. Packaging Lab., Kyocera SLC Technol. Corp., Yasu, Japan
Abstract :
This paper introduces a newly developed advanced surface laminar circuit (Adv-SLC) packaging technology, which utilizes new composite materials. Adv-SLC is a build-up substrate technology designed to fulfill the requirements of the most advanced semiconductor chips. Our new dielectric material is a build-up layer composed of two different materials. We also used a new material for the core substrate, composed of liquid crystalline polymer reinforced with glass cloth. The build-up layer has the following, highly reliable properties: it can maintain both conductivity and dielectricity under the conditions of both a line/space width of 10/10 μm and a via diameter of 30 μm . The core substrate also has excellent, reliable properties: it can maintain both conductivity and dielectricity under the conditions of a through hole diameter of 60 μm and a through hole pitch of 120 μm. We were able to confirm that the formation of the new substrate with the aforementioned new design rules contributes to reduce the size of the silicon chip. Consequently, Adv-SLC contributes to reduce thermal stress when mounting a flip chip.
Keywords :
composite materials; dielectric materials; flip-chip devices; liquid crystal polymers; resins; thermal stresses; Adv-SLC packaging technology; advanced semiconductor chips; advanced surface laminar circuits; build-up layer; build-up substrate technology; composite materials; core substrate; dielectric materials; flip-chip devices; glass cloth; hole diameter; liquid crystalline polymer reinforced; size 120 mum; size 30 mum; size 60 mum; thermal stress; Copper; Glass; Reliability; Resins; Substrates; Wiring; Liquid crystalline polymer; packaging; polyimide; reliability; substrate;
Journal_Title :
Components, Packaging and Manufacturing Technology, IEEE Transactions on
DOI :
10.1109/TCPMT.2011.2159303