Application of SiGe heterojunction bipolar transistors in 5.8 and 10 GHz low-noise amplifiers

The development of wireless services in the 5-10 GHz region demands low-cost radio frequency (RF) monolithic microwave integrated circuits, with SiGe heterojunction bipolar transistors as a likely technology, combining the low cost of a mature silicon technology with excellent RF performance. These transistors are particularly attractive candidates for low-noise applications. The authors demonstrate 5.8 and 10 GHz low-noise amplifiers exhibiting a minimum noise figure of 1.6 and 3.3 dB, respectively, and a power gain above 12 dB