• DocumentCode
    1412175
  • Title

    Enhanced Performance of Nitride-Based Blue LED With Step-Stage MQW Structure

  • Author

    Hsu, Hsiao-Chiu ; Su, Yan-Kuin ; Huang, Shyh-Jer ; Tseng, Chi-Yao ; Cheng, Chiao-Yang ; Chen, Kuan-Chun

  • Author_Institution
    Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
  • Volume
    23
  • Issue
    5
  • fYear
    2011
  • fDate
    3/1/2011 12:00:00 AM
  • Firstpage
    287
  • Lastpage
    289
  • Abstract
    A step-stage InGaN/GaN multiquantum-well (MQW) structure can enhance the efficiency of GaN-based light-emitting diodes (LEDs). Compared to dual-stage MQW LEDs, the step-stage MQW LEDs have lower forward voltage and higher light output. The measured light output power of step-stage LEDs operating at 350 mA shows an increase of approximately 23% with an external quantum efficiency (EQE) increase of 6.6%, when compared to dual-stage LEDs.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; quantum well devices; InGaN-GaN; MQW; current 350 mA; external quantum efficiency; light-emitting diodes; multiquantum-well structure; nitride-based blue LED; Electron-injection layer (EIL); GaN-based light-emitting diodes (LEDs); multiple quantum-well (MQW); step-stage;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2010.2102348
  • Filename
    5675665