DocumentCode
1412182
Title
Monolithic 1.3 μm resonant cavity light emitting diode grown by solid source molecular beam epitaxy
Author
Jalonen, M. ; Kongas, J. ; Toivonen, M. ; Savolainen, P. ; Orsila, S. ; Salokatve, A. ; Pesa, M.
Author_Institution
Dept. of Phys., Tampere Univ. of Technol., Finland
Volume
34
Issue
15
fYear
1998
fDate
7/23/1998 12:00:00 AM
Firstpage
1519
Lastpage
1520
Abstract
A monolithic 1.3 μm resonant cavity light emitting diode grown by solid source molecular beam epitaxy is demonstrated. The diode has a 1λ thick GaInAsP optical cavity active region surrounded by GaInAsP distributed Bragg reflectors. The device exhibits strong spontaneous emission with a narrow linewidth of 13 nm. The results also clearly demonstrate the accuracy of solid source molecular beam epitaxy for the growth of complex and thick GaInAsP-based device structures
Keywords
III-V semiconductors; aluminium compounds; cavity resonators; gallium arsenide; indium compounds; light emitting diodes; molecular beam epitaxial growth; spontaneous emission; 1.3 mum; AlGaInAsP; GaInAsP distributed Bragg reflectors; GaInAsP optical cavity active region; GaInAsP-based device structures; growth; linewidth; monolithic 1.3 μm resonant cavity light emitting diode; solid source molecular beam epitaxy; spontaneous emission;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19981011
Filename
706262
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