DocumentCode :
1412320
Title :
Growth of giant magnetoresistive spin valves with strong exchange bias field
Author :
Choe, G. ; Tsoukatos, A. ; Gupta, S.
Author_Institution :
Veeco Instrum. Inc., Orangeburg, NY, USA
Volume :
34
Issue :
4
fYear :
1998
fDate :
7/1/1998 12:00:00 AM
Firstpage :
867
Lastpage :
869
Abstract :
FeMn based spin valves exhibiting high GMR ratio and high exchange bias field were fabricated by improving the interface roughness as well as the crystallographic texture. A highly oriented (111) NiFe free layer deposited with substrate bias promoted strong (111) textures of Cu and FeMn while maintaining sharp interfaces, resulting in a high exchange bias field, a high blocking temperature, and a high GMR ratio. The correlation between the interlayer coupling energy (Jfree-pinned ) and the interface sharpness was studied as a function of Cu spacer thickness for spin valves with free and pinned NiFe layers deposited under various bias conditions
Keywords :
exchange interactions (electron); giant magnetoresistance; interface structure; iron alloys; magnetic multilayers; nickel alloys; texture; (111) textures; Cu spacer thickness; FeMn based spin valves; Ta-NiFe-Co-Cu-Co-NiFe-FeMn-Ta; bias conditions; crystallographic texture; giant magnetoresistive spin valves; growth; high GMR ratio; high blocking temperature; highly oriented (111) NiFe free layer; interface roughness; interface sharpness; interlayer coupling energy; strong exchange bias field; substrate bias; Crystallography; Electrical resistance measurement; Extraterrestrial measurements; Giant magnetoresistance; Instruments; Magnetic field measurement; Magnetic films; Spin valves; Substrates; Temperature;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.706294
Filename :
706294
Link To Document :
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