Title :
The effect of end and edge shape on the performance of pseudo-spin valve memories
Author :
Gadbois, J. ; Zhu, J.G. ; Vavra, W. ; Hurst, A.
Author_Institution :
Minnesota Univ., Minneapolis, MN, USA
fDate :
7/1/1998 12:00:00 AM
Abstract :
Three Giant Magnetoresistive Random Access Memories (GMRAM) using different device shapes have been simulated. Tapered bits were found to provide the lowest switching thresholds while maintaining bit stability. The effect of edge roughness was also investigated. Bits with more edge roughness were found to have lower switching fields but also have limited output signals
Keywords :
giant magnetoresistance; magnetoresistive devices; random-access storage; Giant Magnetoresistive Random Access Memories; edge roughness; edge shape; end shape; limited output signals; lower switching fields; pseudo-spin valve memories; Anisotropic magnetoresistance; Conducting materials; Crystallization; Giant magnetoresistance; Magnetic anisotropy; Magnetic materials; Magnetization; Shape; Soft magnetic materials; Valves;
Journal_Title :
Magnetics, IEEE Transactions on
