A new multilayered structure for multilevel magnetoresistive random access memory (MRAM) cell

Author

Jeong, Won-Cheol ; Lee, Byung-Il ; Joo, Seung-Ki

Author_Institution

Coll. of Eng., Seoul Nat. Univ., South Korea

Volume

34

Issue

4

fYear

1998

fDate

7/1/1998 12:00:00 AM

Firstpage

1069

Lastpage

1071

Abstract

It is common practice to use two magnetic layers separated by a non-magnetic layer such as copper for the spin valve system. In this work, three magnetic layers (NiFe, NiFe/Co, and Co) are used to form a spin valve and its magnetic properties are characterized. Due to the difference in the coercive field of the three magnetic layers, two plateaus can be obtained in M-H and R-H curves. Each plateau plays as a recording level. According to the external magnetic fields, four distinguishable resistance states can be identified. The optimum preparative condition for the well defined four states have turned out to be NiFe(6 nm)/Cu(2 nm)/NiFe(1.5 nm)/Co(4.5 nm)/Cu(2 nm)/Co(3 nm), where the multilevel MRAM is proved to be realized

Keywords

cobalt; copper; ferromagnetic materials; giant magnetoresistance; iron alloys; magnetic multilayers; magnetoresistive devices; nickel alloys; random-access storage; 1.5 nm; 2 nm; 3 nm; 4.5 nm; 6 nm; NiFe(6 nm)/Cu(2 nm)/NiFe(1.5 nm)/Co(4.5 nm)/Cu(2 nm)/Co(3 nm); NiFe-Cu-NiFe-Co-Cu-Co; coercive field; multilayered structure; multilevel magnetoresistive random access memory cell; spin valve system; Argon; Giant magnetoresistance; Magnetic fields; Magnetic materials; Magnetic multilayers; Magnetic properties; Magnetic separation; Random access memory; Read-write memory; Spin valves;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.706359

Filename

706359