Memory element based on a layered galvanomagnetic structure

Author

Timoshkov, Yu.V. ; Danilyuk, A.L. ; Molchan, I.S. ; Orechovskaya, T.I. ; Kurmashev, V.I.

Author_Institution

Belarussian State Univ. of Inf. & Radioelectron., Minsk, Byelorussia

Volume

34

Issue

4

fYear

1998

fDate

7/1/1998 12:00:00 AM

Firstpage

1078

Lastpage

1080

Abstract

The memory element based on the interaction between magnetic film having perpendicular anisotropy and a Hall element is considered. The magnetic film of high coercivity with perpendicular anisotropy is used for data recording and storage, and the semiconductor film with Hall effect-for data reading. The insulating layer is the electric isolation between semiconductor and magnetic films. A kinetic model of the memory element is proposed. The dependencies of the effect of electric-physical parameters of the structure on the values of the Hall potential are determined

Keywords

Hall effect; magnetic recording; magnetic thin films; magnetoresistance; magnetoresistive devices; Hall element; data reading; data recording; electric isolation; high coercivity; insulating layer; kinetic model; layered galvanomagnetic structure; magnetic film; memory element; perpendicular anisotropy; semiconductor film; storage; Charge carrier processes; Charge carriers; Current density; Electron mobility; Hall effect; Magnetic devices; Magnetic fields; Magnetic films; Magnetic semiconductors; Semiconductor-insulator interfaces;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.706362

Filename

706362