DocumentCode
1412775
Title
Fractal Dimension of Conducting Paths in Nickel Oxide (NiO) Thin Films During Resistance Switching
Author
Yoo, In Kyeong ; Kang, Bo Soo ; Ahn, Seung Eon ; Lee, Chang Bum ; Lee, Myoung Jae ; Park, Gyeong-Su ; Li, Xiang-Shu
Author_Institution
Semicond. Lab., Samsung Adv. Inst. of Technol., Yongin, South Korea
Volume
9
Issue
2
fYear
2010
fDate
3/1/2010 12:00:00 AM
Firstpage
131
Lastpage
133
Abstract
A resistance-switching model in nickel oxide thin film is proposed based on Poisson distribution of electrical switching power. Conductive percolating network in soft breakdown surface may be the source of resistance switching. The main body of network may remain unchanged, but a portion of network is broken and healed repeatedly during switching. Dependence of reset current on electrode area is explained by fractal dimension.
Keywords
Poisson distribution; electric breakdown; electrical conductivity; electrical resistivity; fractals; nickel compounds; percolation; thin films; NiO; Poisson distribution; conducting paths; conductive percolating network; electrical switching power; electrode area; fractal dimension; nickel oxide thin films; resistance switching; resistance-switching model; soft breakdown surface; Nickel oxide; resistance switching; soft breakdown; switching power;
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2010.2041670
Filename
5409546
Link To Document