DocumentCode
1412833
Title
Back Diffusion of Electrons in Ar,
, and
Binary
Author
Dincer, M.S. ; Ozerdem, Ozgur Cemal ; Bektas, S.
Author_Institution
Dept. of Electr. & Electron. Eng., Gazi Univ., Ankara, Turkey
Volume
38
Issue
3
fYear
2010
fDate
3/1/2010 12:00:00 AM
Firstpage
469
Lastpage
473
Abstract
The back diffusion processes in Ar, SF6, and Ar + SF6 binary mixtures are analyzed by a Monte Carlo simulation method employing realistic collision cross sections of the respective component gases in the E/N range from 50 to 500 Td. The escape factors in pure Ar are always higher than that of those in pure SF6, and as the SF6 content in the binary mixture increases, the escape factors decrease accordingly. Furthermore, the number of collisions observed for the backscattered electrons before returning to cathode in SF6 are smaller than that of those in Ar, and as the SF6 content in the binary mixture increases, the mean number of collisions of the backscattered electrons decrease accordingly.
Keywords
Monte Carlo methods; argon; cathodes; electron backscattering; fluorine compounds; plasma collision processes; plasma simulation; plasma transport processes; sputter etching; sulphur compounds; Ar; E/N range; Monte Carlo simulation method; SF6 cathode; SF6; backscattered electrons; collision cross sections; component gases; electron back diffusion; escape factors; $hbox{SF}_{6}$ ; Ar; back diffusion; escape factors;
fLanguage
English
Journal_Title
Plasma Science, IEEE Transactions on
Publisher
ieee
ISSN
0093-3813
Type
jour
DOI
10.1109/TPS.2009.2039945
Filename
5409555
Link To Document