DocumentCode :
1412833
Title :
Back Diffusion of Electrons in Ar, \\hbox {SF}_{6} , and \\hbox {Ar} + \\hbox {SF}_{6} Binary
Author :
Dincer, M.S. ; Ozerdem, Ozgur Cemal ; Bektas, S.
Author_Institution :
Dept. of Electr. & Electron. Eng., Gazi Univ., Ankara, Turkey
Volume :
38
Issue :
3
fYear :
2010
fDate :
3/1/2010 12:00:00 AM
Firstpage :
469
Lastpage :
473
Abstract :
The back diffusion processes in Ar, SF6, and Ar + SF6 binary mixtures are analyzed by a Monte Carlo simulation method employing realistic collision cross sections of the respective component gases in the E/N range from 50 to 500 Td. The escape factors in pure Ar are always higher than that of those in pure SF6, and as the SF6 content in the binary mixture increases, the escape factors decrease accordingly. Furthermore, the number of collisions observed for the backscattered electrons before returning to cathode in SF6 are smaller than that of those in Ar, and as the SF6 content in the binary mixture increases, the mean number of collisions of the backscattered electrons decrease accordingly.
Keywords :
Monte Carlo methods; argon; cathodes; electron backscattering; fluorine compounds; plasma collision processes; plasma simulation; plasma transport processes; sputter etching; sulphur compounds; Ar; E/N range; Monte Carlo simulation method; SF6 cathode; SF6; backscattered electrons; collision cross sections; component gases; electron back diffusion; escape factors; $hbox{SF}_{6}$; Ar; back diffusion; escape factors;
fLanguage :
English
Journal_Title :
Plasma Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-3813
Type :
jour
DOI :
10.1109/TPS.2009.2039945
Filename :
5409555
Link To Document :
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